DocumentCode
1715760
Title
Photonic crystal band edge diode light emitters
Author
Long, Christopher M. ; Giannopoulos, Antonios V. ; Choquette, Kent D.
Author_Institution
Univ. of Illinois, Urbana, IL
fYear
2009
Firstpage
399
Lastpage
402
Abstract
We report electrically injected photonic crystal band edge light emitting diodes. The InP-based membrane light emitters utilize a transverse junction that is created using selective ion implantation. Spectral properties showing the influence of the photonic crystal are reported.
Keywords
III-V semiconductors; arsenic compounds; electroluminescence; gallium compounds; indium compounds; ion implantation; light emitting diodes; membranes; photoluminescence; photonic crystals; InGaAsP; InP-based membrane light emitters; electrical injection; electroluminescence; photoluminescence; photonic crystal band edge diode light emitters; selective ion implantation; spectral properties; Biomembranes; Fabrication; Laser excitation; Light emitting diodes; Optical pumping; Photonic band gap; Photonic crystals; Pump lasers; Semiconductor diodes; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location
Newport Beach, CA
ISSN
1092-8669
Print_ISBN
978-1-4244-3432-9
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2009.5012441
Filename
5012441
Link To Document