Growth of InP crystals with rare-earth elements

Author

Yatskiv, R. ; Grym, J. ; Zdansky, K. ; Pekarek, L. ; Zavadil, J.

Author_Institution

Inst. of Photonics & Electron., Acad. of Sci. of the Czech Republic, Prague

fYear

2009

Firstpage

91

Lastpage

93

Abstract

We report on the influence of rare earth (RE) elements (Pr, Er, and Dy) addition during vertical Bridgman low pressure synthesis on the properties of InP crystals. The temperature dependent Hall measurement and low-temperature photoluminescence (PL) spectroscopy were employed to study the changes in electrical and optical properties of the crystals. The observed changes are attributed to the gettering effect of REs caused by the high affinity of REs towards shallow impurities in InP.

Keywords

Hall effect; III-V semiconductors; crystal growth from melt; dysprosium; europium; getters; impurities; indium compounds; photoluminescence; praseodymium; InP:Dy; InP:Er; InP:Pr; electrical properties; gettering effect; low-temperature photoluminescence spectroscopy; optical properties; rare earth elements; shallow impurities; temperature dependent Hall measurement; vertical Bridgman low pressure synthesis; Crystals; Electric variables measurement; Erbium; Gettering; Impurities; Indium phosphide; Photoluminescence; Spectroscopy; Temperature dependence; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on

Conference_Location

Newport Beach, CA

ISSN

1092-8669

Print_ISBN

978-1-4244-3432-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2009.5012450

Filename

5012450