A comparison between turn-off time of 4H-SiC and silicon power thyristor having the same breakdown voltage 5kV

Some power applications require use of high frequency converters running with thyristor components as controlled interrupters. However, the so-called turn off time (Tq) of silicon thyristors have very large values, limiting thus the operating frequency of these converters. Owing to silicon carbide material performances, it is intended to replace the silicon thyristors by silicon carbide ones in order to reduce the turn-off time (Tq) which affect directly the converter operating frequency. This paper highlights the contribution and benefits of silicon carbide thyristor in high frequency converters. This work will be supported by a comparative study, through numerical simulation and using the finite element method modeling, between 4H-SiC and silicon power thyristor having the same breakdown voltage SKY.