Equivalent circuit modeling of SiGe/Si solar cell including interfacial defect effects

In this paper the numerical investigation of the Sil-xGex/Si heterostructure solar cell is proposed. The proposed investigation is based on the study of the immunity of the Sil-xGex/Si heterostructure against the defects degradation effect at nanoscale level (thin films). The numerical analysis takes into consideration the impact of the interface defects on the solar cell behavior. In addition, a new equivalent electrical circuit of the solar cell before and after the setting up of defect degradation effects is developed in this study. The developed equivalent circuit can be implemented into solar cell simulator like: SPICE and PCID, in order to study the impact of the interface defects on the photovoltaic systems. The proposed investigation is intended to be an aid to solar cell designers.