DocumentCode
1717018
Title
Improvement in electrostatic-discharge tolerance of 1.3µm AlGaInAs/InP buried heterostructure laser diodes
Author
Ichikawa, H. ; Fukuda, C. ; Matsukawa, S. ; Hamada, K. ; Ikoma, N. ; Nakabayashi, T.
Author_Institution
Transm. Devices R&D Labs., Sumitomo Electr. Ind., Ltd., Yokohama
fYear
2009
Firstpage
245
Lastpage
248
Abstract
This is the first report on electrostatic discharge (ESD)-induced degradation of AlGaInAs/InP buried heterostructure laser diodes. We found that the dominant degradation mechanism was melting of the active layer due to light absorption. We successfully improved ESD tolerance by facet passivation. The cumulative degradation ratio at 1.0 kV ESD tests was decreased from 40 to 0%.
Keywords
III-V semiconductors; aluminium compounds; electrostatic discharge; gallium arsenide; indium compounds; passivation; semiconductor lasers; AlGaInAs-InP; buried heterostructure laser diodes; cumulative degradation ratio; dominant degradation mechanism; electrostatic discharge-induced degradation; facet passivation; light absorption; voltage 1 kV; Circuits; Degradation; Diode lasers; Electrostatic discharge; Indium phosphide; Optical reflection; Passivation; Protection; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location
Newport Beach, CA
ISSN
1092-8669
Print_ISBN
978-1-4244-3432-9
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2009.5012484
Filename
5012484
Link To Document