Modified LC-tank ESD protection design for 60-GHz RF applications

Author

Lin, Chun-Yu ; Chu, Li-Wei ; Tsai, Shiang-Yu ; Ker, Ming-Dou ; Lu, Tse-Hua ; Hsu, Tsun-Lai ; Hung, Ping-Fang ; Song, Ming-Hsiang ; Tseng, Jen-Chou ; Chang, Tzu-Heng ; Tsai, Ming-Hsien

Author_Institution

Nat. Chiao-Tung Univ., Hsinchu, Taiwan

fYear

2011

Firstpage

57

Lastpage

60

Abstract

Nanoscale CMOS technologies, which were sensitive to electrostatic discharge (ESD), have been widely used to implement radio-frequency (RF) integrated circuits. Against ESD damages, ESD protection design must be included in RF circuits. A novel modified LC-tank ESD protection design was presented in this work. Such ESD protection circuit had been designed for 60-GHz RF applications and verified in a 65-nm CMOS process. The modified LC-tank can lower the power loss and reduce the layout area under the required human-body-model (HBM) ESD robustness, as compared with the traditional designs. With the better performances, the modified LC-tank ESD protection design was very suitable for RF ESD protection.

Keywords

CMOS integrated circuits; electrostatic discharge; integrated circuit design; millimetre wave integrated circuits; HBM ESD robustness; LC-tank ESD protection design; LC-tank electrostatic discharge protection design; RF integrated circuit; frequency 60 GHz; human-body-model ESD robustness; nanoscale CMOS technology; radiofrequency integrated circuit; size 65 nm; CMOS process; Electrostatic discharge; Inductors; Layout; Logic gates; Radio frequency; Robustness; Electrostatic discharge (ESD); LC-tank; radio frequency (RF);

fLanguage

English

Publisher

ieee

Conference_Titel

Circuit Theory and Design (ECCTD), 2011 20th European Conference on

Conference_Location

Linkoping

Print_ISBN

978-1-4577-0617-2

Electronic_ISBN

978-1-4577-0616-5

Type

conf

DOI

10.1109/ECCTD.2011.6043589

Filename

6043589