Vertical InGaAs-MOSFET with hetero-launcher and undoped channel

We propose a vertical InGaAs MOSFET with hetero-launcher and undoped channel. In a previous trial of this particular MISFET innovation, the number of devices that achieved current modulation by gate bias was only 10% of the total number of the fabricated devices. This poor result was caused by loss of thickness of the gate dielectric. In the new version of this device, the gate stuck was fabricated by successive depositions of SiO₂ and gate metal. The number of devices achieving current modulation by gate bias now increased to 50% of the total number of the fabricated devices. Moreover, the drain current density was observed to increase from 100 mA/mm to 270 mA/mm.