DocumentCode
1719616
Title
Polycrystalline mercuric iodide films: deposition, properties, and detector performance
Author
Roy, U.N. ; Cui, Y. ; Wright, G. ; Barnett, C. ; Burger, A. ; Franks, L.A. ; Bell, Z.W.
Author_Institution
Center for Photonic Mater. & Devices, Fisk Univ., Nashville, TN, USA
Volume
4
fYear
2001
fDate
6/23/1905 12:00:00 AM
Firstpage
2310
Lastpage
2312
Abstract
We report the room temperature α-particle response of a detector fabricated from high purity polycrystalline mercuric iodide thin films. The films are deposited by physical vapor deposition technique using multi-passed zone refined high purity starting material. The films of ~15 μm thick were deposited on indium-tin-oxide (ITO) coated glass substrate and were shown to be reasonably compact and have uniform surface morphology by cross-sectional SEM study. Photoluminescence at 10 K showed two distinct peaks at 533 nm and around 560 nm. A previously reported peak at ~620 nm mainly attributed to the presence of impurities was not present. The room temperature α-particle response measurements were carried out under vacuum and demonstrated that charge collection efficiency can be obtained with thin polycrystalline HgI2. We have demonstrated that a full energy peak is developed, although first indications are that the performance is significantly poorer than a silicon charged particle detector. The charge collection was found to improve with voltage, as expected
Keywords
II-VI semiconductors; alpha-particle detection; mercury compounds; photoluminescence; semiconductor counters; semiconductor thin films; wide band gap semiconductors; 10 K; 15 micron; HgI2; charge collection; cross-sectional SEM; indium-tin-oxide coated glass substrate; multipassed zone refined high purity starting material; photoluminescence; physical vapor deposition technique; polycrystalline mercuric iodide films; room temperature alpha-particle response; uniform surface morphology; Chemical vapor deposition; Detectors; Glass; Impurities; Indium tin oxide; Photoluminescence; Refining; Surface morphology; Temperature measurement; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2001 IEEE
Conference_Location
San Diego, CA
ISSN
1082-3654
Print_ISBN
0-7803-7324-3
Type
conf
DOI
10.1109/NSSMIC.2001.1009284
Filename
1009284
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