DocumentCode
1719845
Title
The BaBar RadFET monitoring board
Author
Camanzi, Barbara ; Crawley, H. Bert ; Holmes-Siedle, Andrew ; McKay, Roy L. ; McKemey, Adrian ; Meyer, W.T. ; Rosenberg, Eli I. ; Stelzer, Joerg ; Tinslay, Jane
Author_Institution
Dept. of Electron. Eng., Brunel Univ., Uxbridge, UK
Volume
4
fYear
2001
fDate
6/23/1905 12:00:00 AM
Firstpage
2357
Lastpage
2362
Abstract
The monitoring board to interface the RadFET integrated radiation dosimeters to the BaBar detector control system is described. RadFET sensors are specially designed p-channel MOSFET transistors which measure lifetime integrated radiation exposure by measuring the source-drain voltage at a fixed current. As the device is irradiated, positive space charge is trapped in the oxide layer, which results in an increase in the source-drain voltage. Communication with the BaBar detector control system proceeds via a CANbus interface using a Motorola MC68HC705X32 microcontroller on the monitoring board and the BaBar standard EPICS-based tools on the BaBar side. The RadFET monitoring Board (RMB) can read up to thirty-two sensors. A manual control allows for adjustment of an offset voltage to increase the maximum readable value as the device receives more exposure, while retaining the original circuit precision. Results from monitoring during the first years of BaBar running are presented
Keywords
MOSFET; dosimeters; BaBar detector; CANbus; MOSFET transistors; Motorola MC68HC705X32; RadFET dosimeters; monitoring board; source-drain voltage; space charge; Communication standards; Communication system control; Control systems; Current measurement; MOSFET circuits; Microcontrollers; Radiation detectors; Radiation monitoring; Space charge; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2001 IEEE
Conference_Location
San Diego, CA
ISSN
1082-3654
Print_ISBN
0-7803-7324-3
Type
conf
DOI
10.1109/NSSMIC.2001.1009296
Filename
1009296
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