• DocumentCode
    1720290
  • Title

    Microelectronics/nanoelectronics and the 21st century

  • Author

    Yoder, Max N.

  • Author_Institution
    Div. of Phys., Office of Naval Res., Arlington, VA, USA
  • fYear
    2001
  • fDate
    6/23/1905 12:00:00 AM
  • Firstpage
    2
  • Lastpage
    7
  • Abstract
    The advent of nonphotolithographic lithography, new electronic materials, and the devices, circuits, and systems they enable will see the electronics revolution of the 20th century to continue well into the 21st century. New lithographic techniques using tools such as nano-imprint and AFM are expected to lead to electronic circuits with lateral spatial resolution under 10 nm. When coupled with innovative materials such as those exhibiting giant magnetoresistance, new ultradense, ultrafast, nonvolatile memory is expected to ensue. New records are expected to be set in solid state laser output power when new wide bandgap semiconductors are combined with concepts such as the quantum cascade laser. Differential etching techniques that have proven efficacious in the design of surface emitting lasers are expected to propel bipolar transistor switching speeds into the THz spectrum with resultant logic devices clocking at well over 100 GHz. This increase will lead to improved signal processing capability. New advances in control of the phase stability of local oscillators and amplifiers will lead to electromagnetic systems with much greater Doppler resolution for radar and much better spectral utilization for communications systems. Devices and ICs combining semiconductors and magnetic spin states are expected to lead to a new class of ICs whose functionality can be dynamically changed in order to adapt optimally to the computational or sensing requirements of the moment. Further advances are expected to accrue in the area of nanophotonics, where device sizes can be smaller than the wavelength of the light they emit or receive
  • Keywords
    Doppler radar; etching; giant magnetoresistance; integrated circuit technology; integrated memory circuits; lithography; micro-optics; nanotechnology; radar resolution; surface emitting lasers; technological forecasting; wide band gap semiconductors; AFM; Doppler resolution; IC functionality; amplifiers; bipolar transistor switching speeds; communications systems; computational requirements; differential etching techniques; electromagnetic systems; electronic circuits; electronic devices; electronic materials; electronic systems; giant magnetoresistance; lateral spatial resolution; lithographic techniques; local oscillators; logic devices; magnetic spin states; microelectronics; nano-imprint; nanoelectronics; nanophotonics; nonphotolithographic lithography; phase stability; quantum cascade laser; radar; sensing requirements; signal processing capability; solid state laser output power; spectral utilization; surface emitting lasers; ultradense ultrafast nonvolatile memory; wavelength-scale devices; wide bandgap semiconductors; Coupling circuits; Electronic circuits; Lithography; Magnetic materials; Microelectronics; Nanoelectronics; Optical materials; Quantum cascade lasers; Spatial resolution; Surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    University/Government/Industry Microelectronics Symposium, 2001. Proceedings of the Fourteenth Biennial
  • Conference_Location
    Richmond, VA
  • ISSN
    0749-6877
  • Print_ISBN
    0-7803-6691-3
  • Type

    conf

  • DOI
    10.1109/UGIM.2001.960283
  • Filename
    960283