Characterization of semiconducting glaze by dielectric spectroscopy in frequency domain

Author

Ullrich, H. ; Gubanski, Stanislaw

Author_Institution

Dept. of Electr. Power Eng., Chalmers Univ. of Technol., Gothenburg, Sweden

Volume

1

fYear

2004

Firstpage

123

Abstract

A study on the dielectric response in frequency domain of a semiconducting glaze is presented. By modifying the electrical contacts to the glaze it was found that the observed polarization relaxation as well as the non-linear voltage dependence of the dc conductance arises due to a low-conductive barrier controlling conduction through the glaze. Structural and chemical analysis using scanning electron microscopy revealed that the outermost layer of the glaze mainly consisted of glass, containing very few tin oxide particles. With an equivalent circuit model, the thickness of the glassy layer was estimated to be about 4 μm, while its resistivity was found to be in the order of 10⁸Ωm to 10⁹Ωm.

Keywords

IV-VI semiconductors; chemical analysis; dielectric polarisation; dielectric relaxation; electrical contacts; electrical resistivity; glass; scanning electron microscopy; 10⁸ to 10⁹ ohmm; 4 micron; SnO₂; chemical analysis; circuit model; dc conductance; dielectric response; dielectric spectroscopy; electrical contacts; frequency domain; glass; glassy layer; low-conductive barrier; nonlinear voltage dependence; polarization relaxation; resistivity; scanning electron microscopy; semiconducting glaze; structural analysis; tin oxide particles; Chemical analysis; Contacts; Dielectrics; Electrochemical impedance spectroscopy; Electrons; Frequency domain analysis; Glazes; Optical polarization; Semiconductivity; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid Dielectrics, 2004. ICSD 2004. Proceedings of the 2004 IEEE International Conference on

Print_ISBN

0-7803-8348-6

Type

conf

DOI

10.1109/ICSD.2004.1350305

Filename

1350305