• DocumentCode
    1721822
  • Title

    Degradation of thin SiO2 gate oxides by atomic hydrogen

  • Author

    Cartier, E. ; DiMaria, D.J. ; Buchanan, D.A. ; Stathis, J. ; Abadeer, W.W. ; Vollertsen, R.-P.

  • Author_Institution
    IBM Rescarch Division
  • fYear
    1994
  • fDate
    6/16/1905 12:00:00 AM
  • Firstpage
    73
  • Lastpage
    74
  • Keywords
    CMOS technology; Chemistry; Degradation; Design for quality; Hardware; Hydrogen; Impact ionization; Leakage current; Predictive models; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1994. 52nd Annual
  • Type

    conf

  • DOI
    10.1109/DRC.1994.1009421
  • Filename
    1009421
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1721822