• DocumentCode
    1722000
  • Title

    Microelectromechanical structures in langasite (La3Ga5SiO14) by wet chemical etching

  • Author

    Ansorge, E. ; Schimpf, S. ; Hirsch, S. ; Schmidt, B. ; Sauerwald, J. ; Fritze, H.

  • Author_Institution
    Inst. for Micro- & Sensor Syst., Otto-von-Guericke Univ. of Magdeburg, Germany
  • Volume
    1
  • fYear
    2005
  • Firstpage
    908
  • Abstract
    Lanthanum gallium silicate (langasite, La3Ga5SiO14) is a new piezoelectric material with promising properties for micro-electromechanical applications at high temperatures. So far it has been used for SAW and BAW devices. This paper reports on the possibility of fabricating microstructures in langasite by wet chemical etching. The etching behavior of different chemicals applying different mask materials was investigated. Further, the effect of doping on the etching behavior was studied. As a first demonstrator a cantilever beam in langasite has been produced showing the possibility of MEMS in langasite. The resonance spectrum of this device was recorded at temperatures up to 600°C.
  • Keywords
    etching; gallium compounds; lanthanum compounds; masks; micromachining; micromechanical devices; piezoelectric materials; 600 degC; La3Ga5SiO14; cantilever beam resonance spectrum; doping effects; high temperature MEMS; langasite; mask materials; microelectromechanical structures; micromachining; microstructure fabrication; piezoelectric material; wet chemical etching; Bulk acoustic wave devices; Chemicals; Doping; Gallium; Lanthanum; Microstructure; Piezoelectric materials; Surface acoustic waves; Temperature; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
  • Print_ISBN
    0-7803-8994-8
  • Type

    conf

  • DOI
    10.1109/SENSOR.2005.1496565
  • Filename
    1496565