• DocumentCode
    1722090
  • Title

    Permanent single event functional interrupts (SEFIs) in 128- and 256-megabit synchronous dynamic random access memories (SDRAMs)

  • Author

    Koga, R. ; Yu, P. ; Crawford, K.B. ; Crain, S.H. ; Tran, V.T.

  • Author_Institution
    The Aerosp. Corp., Los Angeles, CA, USA
  • fYear
    2001
  • fDate
    6/23/1905 12:00:00 AM
  • Firstpage
    6
  • Lastpage
    13
  • Abstract
    Permanent Single Event Functional Interrupts (SEFIs) have been observed in several high density Synchronous Dynamic Random Access Memories (SDRAMs). Affected devices often lose both Read and Write functions
  • Keywords
    DRAM chips; radiation hardening (electronics); 128 Mbit; 256 Mbit; SDRAMs; permanent single event functional interrupts; read functions; synchronous dynamic random access memories; write functions; Aerodynamics; Aerospace testing; CMOS technology; Content addressable storage; Logic devices; Manufacturing; Packaging; Radio access networks; SDRAM; Telephony;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2001 IEEE
  • Conference_Location
    Vancouver, BC
  • Print_ISBN
    0-7803-7199-2
  • Type

    conf

  • DOI
    10.1109/REDW.2001.960441
  • Filename
    960441
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1722090