Vertically integrated silicon single crystalline MEMS switch

Author

Aharon, Oren ; Feldman, Shai ; Nemirovsky, Yael

Author_Institution

Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel

Volume

1

fYear

2005

Firstpage

1047

Abstract

A DC to RF shunt contact micro-electro-mechanical switch was fabricated. The fabrication of the MEMS device was preformed using a bulk micromachining process on an SOI wafer followed by a vertical integration to a microwave circuit wafer. The pull-in voltage and natural frequency of the switch were characterized. Also, RF performances at both switch states were measured. The concept of the packaged switch described in this paper enables us to offer a-stand alone switch, independent of the RF circuit substrate material or technology being used.

Keywords

elemental semiconductors; hermetic seals; micromachining; microswitches; silicon; silicon-on-insulator; wafer bonding; 54 V; 9.87 kHz; DC/RF shunt contact switch; SOI wafer; Si; bulk micromachining; hermetically sealed package; microwave circuit wafer vertical integration; packaged stand alone switch; silicon single crystalline MEMS; switch natural frequency; switch pull-in voltage; vertically integrated MEMS switch; Contacts; Crystallization; Fabrication; Microelectromechanical devices; Micromachining; Microswitches; Radio frequency; Silicon; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on

Print_ISBN

0-7803-8994-8

Type

conf

DOI

10.1109/SENSOR.2005.1496635

Filename

1496635