DocumentCode
1724634
Title
Monte carlo simulations of p- and n-channel dual-gate Si MOSFETs at the limits of scaling
Author
Frank, D.J. ; Laux, S.E. ; Fischetti, M.V.
Author_Institution
IBM Research Division, T. J. Watson Research Center
fYear
1993
fDate
6/15/1905 12:00:00 AM
Firstpage
30
Lastpage
31
Keywords
Charge carrier processes; Circuit simulation; FETs; Geometry; MOSFETs; Monte Carlo methods; Quantization; Thickness control; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1993. 51st Annual
Type
conf
DOI
10.1109/DRC.1993.1009568
Filename
1009568
Link To Document