DocumentCode

1724908

Title

OMCVD grown AlInAs/GaInAs HEMT´s with AlGaInP schottky layer

Author

Chough, K.B. ; Hong, W.P. ; Caneau, C. ; Song, J.I. ; Hayes, J.R.

Author_Institution

Bellcore

fYear

1993

fDate

6/15/1905 12:00:00 AM

Firstpage

53

Lastpage

54

Keywords

Aluminum; Doping; Electric breakdown; Gate leakage; HEMTs; Leakage current; Springs; Transconductance; Voltage; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1993. 51st Annual

Type

conf

DOI

10.1109/DRC.1993.1009578

Filename

1009578