DocumentCode
1724919
Title
Parasitics extraction, wideband modeling and sensitivity analysis of through-strata-via (TSV) in 3D integration/packaging
Author
Xu, Zheng ; Gu, Xiaoxiong ; Lu, Jian-Qiang
Author_Institution
Dept. of Electr., Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
fYear
2011
Firstpage
1
Lastpage
6
Abstract
This paper reports on a number of extraction techniques to investigate the TSV parasitics in 3D integration/packaging, including 3D fullwave electromagnetic (EM) simulator, 3D quasi-static EM simulator, static SPICE simulator, and empirical calculations. All the TSV RLGC values extracted from the fullwave simulation are in good agreement among different approaches over the entire frequency range of interest. Empirical calculations indicate close results to fullwave extractions, while the quasi-static simulation underestimates TSV parasitics. A wideband SPICE model is generated from TSV EM solution with good agreement for both magnitudes and phases of return loss and insertion loss. Further sensitivity analysis results indicate the isolation layer thickness weighs most in the signal gain at 20 GHz. This work provides some insight to TSV electrical characteristics and helps TSV physical design to maximize the benefits of 3D systems.
Keywords
SPICE; integrated circuit design; integrated circuit modelling; integrated circuit packaging; sensitivity analysis; three-dimensional integrated circuits; 3D fullwave EM simulator; 3D fullwave electromagnetic simulator; 3D integration-packaging; 3D quasistatic EM simulator; TSV EM solution; TSV RLGC values; TSV electrical characteristics; TSV parasitics; TSV physical design; empirical calculations; isolation layer thickness; parasitic extraction; sensitivity analysis; static SPICE simulator; through-strata-via; wideband SPICE model; wideband modeling; Copper; Integrated circuit modeling; SPICE; Substrates; Three dimensional displays; Through-silicon vias; Transmission line matrix methods; 3D integration; RLGC extraction; TSV; modeling; packaging; sensitivity analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference (ASMC), 2011 22nd Annual IEEE/SEMI
Conference_Location
Saratoga Springs, NY
ISSN
1078-8743
Print_ISBN
978-1-61284-408-4
Electronic_ISBN
1078-8743
Type
conf
DOI
10.1109/ASMC.2011.5898175
Filename
5898175
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