• DocumentCode
    1724952
  • Title

    Scaling of copper seed layer thickness using plasma-enhanced ALD and an optimized precursor

  • Author

    Mao, Jiajun ; Eisenbraun, Eric ; Omarjee, Vincent ; Korolev, Andrey ; Dussarrat, Christian

  • Author_Institution
    Coll. of Nanoscale Sci. & Eng., Univ. at Albany-SUNY, Albany, NY, USA
  • fYear
    2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A recently developed precursor, AbaCus, has been evaluated for use in ultra-low temperature copper deposition by PEALD. Film adhesion, platability and process window evaluation demonstrate a strong capability of this precursor to overcome current metallization challenges.
  • Keywords
    adhesion; atomic layer deposition; copper; plasma CVD; AbaCus; Cu; developed precursor; film adhesion; optimized precursor; plasma-enhanced ALD; platability; process window evaluation; seed layer thickness scaling; ultra-low temperature copper deposition; Adhesives; Conductivity; Copper; Films; Plasma temperature; Temperature measurement; AbaCus; BEOL; Copper; PE-ALD;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference (ASMC), 2011 22nd Annual IEEE/SEMI
  • Conference_Location
    Saratoga Springs, NY
  • ISSN
    1078-8743
  • Print_ISBN
    978-1-61284-408-4
  • Electronic_ISBN
    1078-8743
  • Type

    conf

  • DOI
    10.1109/ASMC.2011.5898176
  • Filename
    5898176
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1724952