• DocumentCode
    1725183
  • Title

    High-speed, high-breakdown voltage InP/InGaAs double heterojunction bipolar transistors grown by MOMBE

  • Author

    Chau, Hin-Fai ; Beam, Edward A., III

  • Author_Institution
    Texas Instruments Inc.
  • fYear
    1993
  • fDate
    6/15/1905 12:00:00 AM
  • Firstpage
    81
  • Lastpage
    82
  • Keywords
    Current density; Current measurement; Cutoff frequency; Double heterojunction bipolar transistors; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Message-oriented middleware; Molecular beam epitaxial growth; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1993. 51st Annual
  • Type

    conf

  • DOI
    10.1109/DRC.1993.1009590
  • Filename
    1009590
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1725183