DocumentCode
1725229
Title
SiC technologies for future energy electronics
Author
Kimoto, Tsunenobu
Author_Institution
Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan
fYear
2010
Firstpage
9
Lastpage
14
Abstract
High-efficiency electric power conversion is an essential technology for energy saving. The efficiency of power converters/inverters relies on the performance of power semiconductor devices employed in the power electronic systems. Silicon carbide (SiC) is a newly-emerging wide bandgap semiconductor, by which high-voltage, low-loss power devices can be realized owing to its superior properties. This paper reviews recent progress in SiC material and device technologies for power device applications. Benefits and remaining issues of SiC power devices are highlighted.
Keywords
invertors; power convertors; power semiconductor devices; silicon compounds; electric power conversion; energy electronics; energy saving; power converters/inverters; power electronic systems; power semiconductor devices; Doping; Insulated gate bipolar transistors; Inverters; Power MOSFET; Silicon; Silicon carbide; Schottky barrier diode; breakdown; on-resistance; power MOSFET; power device; silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location
Honolulu
Print_ISBN
978-1-4244-5451-8
Electronic_ISBN
978-1-4244-5450-1
Type
conf
DOI
10.1109/VLSIT.2010.5556137
Filename
5556137
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