• DocumentCode
    1725229
  • Title

    SiC technologies for future energy electronics

  • Author

    Kimoto, Tsunenobu

  • Author_Institution
    Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan
  • fYear
    2010
  • Firstpage
    9
  • Lastpage
    14
  • Abstract
    High-efficiency electric power conversion is an essential technology for energy saving. The efficiency of power converters/inverters relies on the performance of power semiconductor devices employed in the power electronic systems. Silicon carbide (SiC) is a newly-emerging wide bandgap semiconductor, by which high-voltage, low-loss power devices can be realized owing to its superior properties. This paper reviews recent progress in SiC material and device technologies for power device applications. Benefits and remaining issues of SiC power devices are highlighted.
  • Keywords
    invertors; power convertors; power semiconductor devices; silicon compounds; electric power conversion; energy electronics; energy saving; power converters/inverters; power electronic systems; power semiconductor devices; Doping; Insulated gate bipolar transistors; Inverters; Power MOSFET; Silicon; Silicon carbide; Schottky barrier diode; breakdown; on-resistance; power MOSFET; power device; silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2010 Symposium on
  • Conference_Location
    Honolulu
  • Print_ISBN
    978-1-4244-5451-8
  • Electronic_ISBN
    978-1-4244-5450-1
  • Type

    conf

  • DOI
    10.1109/VLSIT.2010.5556137
  • Filename
    5556137