• DocumentCode
    172582
  • Title

    FEDRAM: A capacitor-less DRAM based on ferroelectric-gated field-effect transistor

  • Author

    Ma, T.P.

  • Author_Institution
    Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
  • fYear
    2014
  • fDate
    18-21 May 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A capacitor-less DRAM cell based on ferroelectric-gate memory transistor structure, FErroelectric-DRAM (FEDRAM), is introduced. Compared to the conventional DRAM cell, it offers much simpler cell structure, longer retention time, better scalability, and lower power consumption. Cell size of 4F2 can be realized. It is also most suitable for embedded applications. Recent developments of the HfO2-based ferroelectrics have overcome the shortcomings of PZT and SBT for FEDRAM technology, and make the commercialization of FEDRAM much closer to reality.
  • Keywords
    DRAM chips; ferroelectric storage; field effect transistor circuits; hafnium compounds; high-k dielectric thin films; 4F2 cell size; FEDRAM technology; HfO2; PZT; SBT; capacitor-less DRAM cell; cell structure; ferroelectric-DRAM; ferroelectric-gate memory transistor structure; ferroelectric-gated field-effect transistor; lower power consumption; Capacitors; Ferroelectric films; Hafnium compounds; Logic gates; Random access memory; Silicon; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop (IMW), 2014 IEEE 6th International
  • Conference_Location
    Taipei
  • Print_ISBN
    978-1-4799-3594-9
  • Type

    conf

  • DOI
    10.1109/IMW.2014.6849350
  • Filename
    6849350
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=172582