Effect of SET temperature on data retention performances of HfO2-based RRAM cells

Author

Cabout, Thomas ; Vianello, E. ; Jalaguier, E. ; Grampeix, H. ; Molas, G. ; Blaise, P. ; Cueto, O. ; Guillermet, M. ; Nodin, J.F. ; Pemiola, L. ; Blonkowski, S. ; Jeannot, S. ; Denorme, S. ; Candelier, P. ; Bocquet, Michael ; Muller, Candice

Author_Institution

LETI, CEA, Grenoble, France

fYear

2014

fDate

18-21 May 2014

Firstpage

1

Lastpage

4

Abstract

In this paper the effect of SET temperature on data-retention performances in HfO₂-based RRAM has been thoroughly investigated. We demonstrated, for the first time to our knowledge, that high temperature programming (even if it has no influence on the initial resistance) has a strong effect on thermal stability of the conductive filaments. Moreover, we highlighted the impact of SET temperature also on RESET characteristics. We gathered all these experimental evidences under a simple modeling of the filament morphology, proving that the filament size might be tuned by adjusting the programming temperature. We conclude that reducing the conductive filament diameter while keeping high density of the oxygen vacancies significantly improves data retention.

Keywords

hafnium compounds; high-k dielectric thin films; integrated circuit modelling; random-access storage; thermal stability; HfO₂; RESET characteristics; RRAM cells; SET temperature effect; conductive filament diameter reduction; data retention performances; filament morphology; filament size; high temperature programming; oxide-based resistive random access memories; oxygen vacancies; programming temperature; thermal stability; Equations; Hafnium compounds; Integrated circuits; Mathematical model; Resistance; Temperature; Temperature measurement; Resistive-switching random access memory (RRAM); data retention; modeling; temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2014 IEEE 6th International

Conference_Location

Taipei

Print_ISBN

978-1-4799-3594-9

Type

conf

DOI

10.1109/IMW.2014.6849355

Filename

6849355