• DocumentCode
    1726126
  • Title

    Experimental Study of a 6.5kV MOS Controllable Freewheeling Diode

  • Author

    Bauer, J.G. ; Duetemeyer, T. ; Hille, F. ; Humbel, O.

  • Author_Institution
    Infineon Technol. AG, Neubiberg
  • fYear
    2008
  • Firstpage
    40
  • Lastpage
    43
  • Abstract
    A 6.5 kV controllable freewheeling diode (CFD) has been realized for the first time. A forward voltage VF up to 2.5 V (66 A/cm2) and a VF rising over 1.8 V between gate off state and gate on state at 125degC temperature was realized. A reduction of the recovery charge Qrr and consequently reverse recovery energy Erec of more than 35% have been achieved in comparison with a state of the art 6.5 kV emitter controlled diode.
  • Keywords
    MIS devices; semiconductor diodes; MOS controllable freewheeling diode; forward voltage; recovery charge; reverse recovery energy; temperature 125 C; voltage 2.5 V; voltage 6.5 kV; Anodes; Computational fluid dynamics; Plasma measurements; Plasma temperature; Power semiconductor devices; Semiconductor device measurement; Semiconductor diodes; Switching loss; Temperature control; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    978-1-4244-1532-8
  • Electronic_ISBN
    978-1-4244-1533-5
  • Type

    conf

  • DOI
    10.1109/ISPSD.2008.4538892
  • Filename
    4538892
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1726126