• DocumentCode
    1726161
  • Title

    A Trial Simulation on the Cosmic Ray Induced Failure of the Long n- Length pin Diodes

  • Author

    Takata, Ikunori

  • Author_Institution
    Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Amagasaki
  • fYear
    2008
  • Firstpage
    44
  • Lastpage
    47
  • Abstract
    This paper reports some simulation results on the cosmic ray induced failure of 3000 V-class silicon diodes using the new direct recombination model which had been used in the simulation of 600 V-class diodes [1], Distinct destruction wave forms were not reproduced. However, an unstable operating mode that was peculiar in a long n- -length diode was found. Regarding this instability as the cause of the destruction, the curious empirical facts could be explained consistently.
  • Keywords
    cosmic ray interactions; elemental semiconductors; p-i-n diodes; silicon; cosmic ray induced failure; direct recombination model; distinct destruction wave forms; pin diodes; silicon diodes; Charge carrier density; Current density; Discrete event simulation; Failure analysis; Integrated circuit modeling; Power semiconductor devices; Radiative recombination; Semiconductor diodes; Silicon; Single event upset; cosmic ray induced failure; direct recombination model; failure mechanism; long n- pin diode; simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    978-1-4244-1532-8
  • Electronic_ISBN
    978-1-4244-1533-5
  • Type

    conf

  • DOI
    10.1109/ISPSD.2008.4538893
  • Filename
    4538893