DocumentCode
172641
Title
Storage element scaling impact on CNT memory retention and ON/OFF window
Author
Rosendale, Glen ; Viviani, Darlene ; Manning, Monte ; Henry Huang, X.M. ; Rueckes, Thomas ; Shi Jie Wen ; Wong, Rita
Author_Institution
Nantero, Inc., Sunnyvale, CA, USA
fYear
2014
fDate
18-21 May 2014
Firstpage
1
Lastpage
3
Abstract
CNT (Carbon Nanotube) based memory (NRAM) demonstrates a beneficial scaling effect related to the patterned area of the CNT region, such that the scaled feature shows an improvement in ON/OFF resistance ratio (to ~10,000x and improved data retention relative to the original feature dimensions.
Keywords
carbon nanotubes; random-access storage; CNT memory retention; NRAM; ON-OFF resistance ratio; ON-OFF window; carbon nanotube; data retention; storage element scaling impact; Carbon nanotubes; Electrodes; Nonvolatile memory; Random access memory; Reliability; Resistance; Standards; CNT; Carbon Nanotubes; NRAM; NVM; RRAM;
fLanguage
English
Publisher
ieee
Conference_Titel
Memory Workshop (IMW), 2014 IEEE 6th International
Conference_Location
Taipei
Print_ISBN
978-1-4799-3594-9
Type
conf
DOI
10.1109/IMW.2014.6849391
Filename
6849391
Link To Document