DocumentCode
1726465
Title
Statistical evaluation for trap energy level of RTS characteristics
Author
Teramoto, A. ; Fujisawa, T. ; Abe, K. ; Sugawa, S. ; Ohmi, T.
Author_Institution
New Ind. Creation Hatchery Center, Tohoku Univ., Sendai, Japan
fYear
2010
Firstpage
99
Lastpage
100
Abstract
The energy distributions of traps which cause RTS noise using the array test pattern having a large number of n-MOS and p-MOS are investigated. The more traps which cause RTS noise located near the conduction band. The phenomena in p-MOS are almost the same as n-MOS. However, the number of traps in p-MOS is less than that in n-MOS. The tendency of the energy distribution of the traps near the conduction band edge is different from that near the valence band edge.
Keywords
MOSFET; conduction bands; semiconductor device noise; statistical analysis; valence bands; RTS characteristics; RTS noise; array test pattern; conduction band edge; energy distributions; n-MOS; p-MOS; statistical evaluation; trap energy level; valence band edge; Arrays; Electron traps; Energy measurement; Logic gates; MOSFETs; Noise; MOS; RTS; noise; statistical evaluation; trap;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location
Honolulu
Print_ISBN
978-1-4244-5451-8
Electronic_ISBN
978-1-4244-5450-1
Type
conf
DOI
10.1109/VLSIT.2010.5556186
Filename
5556186
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