DocumentCode
1726576
Title
Development of perfect shape memory effect in sputter-deposited Ti-Ni thin films
Author
Miyazaki, S. ; Nomura, K.
Author_Institution
Inst. of Mater. Sci., Tsukuba Univ., Ibaraki, Japan
fYear
1994
fDate
6/16/1905 12:00:00 AM
Firstpage
176
Lastpage
181
Abstract
Ti-Ni shape memory alloy thin films were deposited using an RF magnetron sputtering method. These films showed a perfect shape memory effect which is the same as that of bulk shape memory alloys. The shape recovery stress and strain measured in the thin films were large enough for fabricating microactuators to power micromachines. The shape recovery stress was more than 400 MPa. The maximum shape recovery strain amounted to 3%. The thin film showed a two-stage deformation upon cooling; the strain induced in each stage recovered perfectly upon heating. The first stage corresponds to the R-phase transformation, while the second the martensitic transformation. The transformation temperatures and shape memory characteristics were strongly affected by heat-treatment and alloy composition. In the present paper, development and characterization of a perfect shape memory effect in sputter-deposited Ti-Ni thin films are presented specially stressing the materials science approaches
Keywords
shape memory effects; 400 MPa; R-phase transformation; RF magnetron sputtering; Ti-Ni; Ti-Ni shape memory alloy thin films; alloy composition; bulk shape memory alloys; cooling; heat-treatment; martensitic transformation; microactuators; micromachines; perfect shape memory effect; shape memory characteristics; shape recovery stress; sputter-deposited Ti-Ni thin films; strain; transformation temperatures; two-stage deformation; Capacitive sensors; Magnetic field induced strain; Microactuators; Power measurement; Radio frequency; Shape measurement; Shape memory alloys; Sputtering; Strain measurement; Stress measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 1994, MEMS '94, Proceedings, IEEE Workshop on
Conference_Location
Oiso
Print_ISBN
0-7803-1833-1
Type
conf
DOI
10.1109/MEMSYS.1994.555619
Filename
555619
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