Dopant and carrier profiling in FinFET-based devices with sub-nanometer resolution

Author

Mody, J. ; Kambham, A.K. ; Zschätzsch, G. ; Schatzer, P. ; Chiarella, T. ; Collaert, N. ; Witters, L. ; Jurczak, M. ; Horiguchi, N. ; Gilbert, M. ; Eyben, P. ; Kölling, S. ; Schulze, A. ; Hoffmann, T.Y. ; Vandervorst, W.

Author_Institution

Dept. of Phys. & Astron., K.U. Leuven, Leuven, Belgium

fYear

2010

Firstpage

195

Lastpage

196

Abstract

Atom probe tomography (APT) in conjunction with scanning spreading resistance microscopy (SSRM) is demonstrated for the first time to profile dopant and carrier distributions in FinFET-based devices with sub-nanometer resolution. These two techniques together provide information on the degree of conformality, the dose retention and the dopant activation. These results are also compared with a methodology involving secondary ion mass spectrometry (SIMS). Ion implantation for increased conformality of source/drain extensions is demonstrated for tilted implants, which clearly leads to improved device performance.

Keywords

MOSFET; atom probe field ion microscopy; ion implantation; nanotechnology; semiconductor doping; tomography; APT; FinFET-based devices; IMS; SSRM; atom probe tomography; carrier distributions; carrier profiling; dopant activation; dopant distributions; dose retention; ion implantation; scanning spreading resistance microscopy; secondary ion mass spectrometry; source/drain extensions; subnanometer resolution; tilted implants; Boron; Doping profiles; Implants; Ion implantation; Performance evaluation; Probes; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2010 Symposium on

Conference_Location

Honolulu

Print_ISBN

978-1-4244-5451-8

Electronic_ISBN

978-1-4244-5450-1

Type

conf

DOI

10.1109/VLSIT.2010.5556225

Filename

5556225