• DocumentCode
    1727726
  • Title

    Electron mobility in high-k Ge-MISFETs goes up to higher

  • Author

    Nishimura, T. ; Lee, C.H. ; Wang, S.K. ; Tabata, T. ; Kita, K. ; Nagashio, K. ; Toriumi, A.

  • Author_Institution
    Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2010
  • Firstpage
    209
  • Lastpage
    210
  • Abstract
    This paper will first discuss intrinsic advantages of high-pressure oxidation of Ge and then present further improvement of electron mobility in Ge n-MISFET using high-k gate stacks combined with high-pressure oxidation. The peak mobility is about 1500 cm2/Vsec, which is the highest one to date among unstrained Si and Ge MISFETs. Ge-CMOS is a strong candidate for beyond Si-CMOS.
  • Keywords
    MISFET; electron mobility; elemental semiconductors; germanium; high-k dielectric thin films; oxidation; CMOS; Ge; electron mobility; high pressure oxidation; high-k MISFET; high-k gate stack; Capacitance-voltage characteristics; Electron mobility; Films; High K dielectric materials; Logic gates; MISFETs; Oxidation; Ge; GeO2; Mobility; Rare-earth oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2010 Symposium on
  • Conference_Location
    Honolulu
  • Print_ISBN
    978-1-4244-5451-8
  • Electronic_ISBN
    978-1-4244-5450-1
  • Type

    conf

  • DOI
    10.1109/VLSIT.2010.5556230
  • Filename
    5556230
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1727726