• DocumentCode
    1727793
  • Title

    Experimental demonstration of high source velocity and its enhancement by uniaxial stress in Ge PFETs

  • Author

    Kobabyashi, Masaharu ; Mitard, Jerome ; Irisawa, Toshihumi ; Hoffmann, Thomas Y. ; Meuris, Marc ; Saraswat, Krishna ; Nishi, Yoshio ; Heyns, Marc

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    2010
  • Firstpage
    215
  • Lastpage
    216
  • Abstract
    High-field transport in short channel (70 nm) Ge PFETs was, for the first time, thoroughly investigated, in terms of ballisticity and the relationship between carrier velocity and mobility, where 1.6×-2× higher velocity than that in Si PFETs was confirmed. The effectiveness of the uniaxial stress to velocity enhancement as a performance booster was experimentally demonstrated in short channel regime. 1.4× higher drive current can be achieved by strained Ge PFET in ballistic regime.
  • Keywords
    elemental semiconductors; field effect transistors; germanium; semiconductor device manufacture; silicon; Ge; PFET; Si; high source velocity; size 70 nm; uniaxial stress; velocity enhancement; Length measurement; Logic gates; Scattering; Silicon; Stress; Stress measurement; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2010 Symposium on
  • Conference_Location
    Honolulu
  • Print_ISBN
    978-1-4244-5451-8
  • Electronic_ISBN
    978-1-4244-5450-1
  • Type

    conf

  • DOI
    10.1109/VLSIT.2010.5556233
  • Filename
    5556233
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1727793