Development and characterisation of a high aspect ratio vertical FET sensor for motion detection

In this paper the development, the fabrication and the experimental characterisation of a novel vertical field effect transistor (vertical FET) is presented. The vertical FET can be used for signal conversion from the mechanical to the electrical domain. This low impedance sensing technique was realized by introducing a source and drain region in opposite of a movable mass which acts as the gate. The channel resistance between drain and source is influenced by the movable mass working as a sensing unit. Theoretical calculations and practical experiments of the structure are performed. Mechanical and electrical effects over a temperature range of -40/spl deg/C to 180/spl deg/C are investigated.