DocumentCode
1729717
Title
Processing of ultrathin 300 mm wafers with carrierless technology
Author
Spiller, Sven ; Molina, Froilan ; Wolf, Jürgen M. ; Grafe, Jürgen ; Schenke, Andreas ; Toennies, Dietrich ; Hennemeyer, Marc ; Tabuchi, Tomotaka ; Auer, Hans
Author_Institution
Doublecheck Semicond., Singapore, Singapore
fYear
2011
Firstpage
984
Lastpage
988
Abstract
We present a “carrierless” design for the manufacturing of ultrathin Silicon wafers, which are used in e.g. TSV (Through Silicon Via) and power chip applications. A carrierless wafer is a wafer which has a thinned inner portion, usually thinner than 150 μm, and a rim portion, which is stabilizing the wafer, so that the whole wafer can be handled without any additional support. In more detail, progress on 300 mm carrierless wafers and its compatibility with standard applications like RDL (Redistribution Layer) and bumping will be discussed.
Keywords
integrated circuit design; integrated circuit manufacture; silicon; Si; carrierless technology; carrierless wafer; power chip applications; redistribution layer; rim portion; size 300 mm; through silicon via; ultrathin silicon wafers; Bonding; Copper; Electronic components; Resists; Silicon; Spinning; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2011 IEEE 61st
Conference_Location
Lake Buena Vista, FL
ISSN
0569-5503
Print_ISBN
978-1-61284-497-8
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2011.5898629
Filename
5898629
Link To Document