• DocumentCode
    1729717
  • Title

    Processing of ultrathin 300 mm wafers with carrierless technology

  • Author

    Spiller, Sven ; Molina, Froilan ; Wolf, Jürgen M. ; Grafe, Jürgen ; Schenke, Andreas ; Toennies, Dietrich ; Hennemeyer, Marc ; Tabuchi, Tomotaka ; Auer, Hans

  • Author_Institution
    Doublecheck Semicond., Singapore, Singapore
  • fYear
    2011
  • Firstpage
    984
  • Lastpage
    988
  • Abstract
    We present a “carrierless” design for the manufacturing of ultrathin Silicon wafers, which are used in e.g. TSV (Through Silicon Via) and power chip applications. A carrierless wafer is a wafer which has a thinned inner portion, usually thinner than 150 μm, and a rim portion, which is stabilizing the wafer, so that the whole wafer can be handled without any additional support. In more detail, progress on 300 mm carrierless wafers and its compatibility with standard applications like RDL (Redistribution Layer) and bumping will be discussed.
  • Keywords
    integrated circuit design; integrated circuit manufacture; silicon; Si; carrierless technology; carrierless wafer; power chip applications; redistribution layer; rim portion; size 300 mm; through silicon via; ultrathin silicon wafers; Bonding; Copper; Electronic components; Resists; Silicon; Spinning; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2011 IEEE 61st
  • Conference_Location
    Lake Buena Vista, FL
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-61284-497-8
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2011.5898629
  • Filename
    5898629