• DocumentCode
    1730073
  • Title

    Transport characterisation of Ge pMOSFETS in saturation regime

  • Author

    Diouf, C. ; Cros, A. ; Monfray, S. ; Mitard, J. ; Rosa, J. ; Boeuf, F. ; Ghibaudo, G.

  • Author_Institution
    STMicroelectron., Crolles, France
  • fYear
    2011
  • Firstpage
    223
  • Lastpage
    226
  • Abstract
    The limiting carrier velocity concept allowing the determination of the nature of transport is used for the first time in Ge channel MOSFET. The limiting carrier velocity extracted on bulk germanium (Ge) pMOSFET is studied versus temperature. A drift-diffusion dominated transport is demonstrated despite the good transport quality of germanium devices down to 60 nm.
  • Keywords
    MOSFET; germanium; Ge; drift-diffusion dominated transport; limiting carrier velocity concept; pMOSFET; saturation regime; size 60 nm; transport characterisation; Limiting; Logic gates; MOSFETs; Metals; Scattering; Silicon; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European
  • Conference_Location
    Helsinki
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4577-0707-0
  • Electronic_ISBN
    1930-8876
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2011.6044194
  • Filename
    6044194
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1730073