Effect of GaAs MESFET´s imperfections, gamma-radiation, and temperature on the performance of microwave active filters

Author

El-Kabbani, A.S.S. ; EL-Shahat, L.A. ; Soliman, F.A.S. ; Farag, F.M.

Author_Institution

Fac. of Eng., Al-Azhar Univ., Cairo, Egypt

Volume

2

fYear

1997

Firstpage

791

Abstract

An investigation has been presented for the effect of imperfections of NE71000 GaAs MESFET´s on the performance of microwave second-order active band-pass filters. The cascaded technique is used for the design and construction of a fourth-order systems. The frequency responses for both the actual, ideal, and predistortion cases were obtained using computer simulation program (SPICE). The frequency responses are evaluated when the system operates at different conditions of temperature (-50 to 150°C) and radiation (γ-rays up to 80 Mrads)

Keywords

III-V semiconductors; SPICE; Schottky gate field effect transistors; active filters; band-pass filters; circuit analysis computing; equivalent circuits; frequency response; gallium arsenide; gamma-ray effects; microwave field effect transistors; microwave filters; semiconductor device models; thermal analysis; γ-rays; -50 to 150 C; 80 Mrad; GaAs; GaAs MESFET imperfections; NE71000; SPICE; cascaded technique; computer simulation program; fourth-order systems; frequency responses; gamma-radiation effects; microwave active filter performance; second-order band-pass filters; temperature effects; Active filters; Band pass filters; Circuits; Computer simulation; Frequency; Gallium arsenide; MESFETs; Microwave filters; SPICE; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1997. Proceedings., 1997 21st International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-3664-X

Type

conf

DOI

10.1109/ICMEL.1997.632965

Filename

632965