Electron transport in nanoscale semiconductor devices: ballistic versus quasiballistic

We have briefly reviewed our recent studies of quasi-ballistic transport in nanoscale semiconductor structures. It has been demonstrated both theoretically and numerically that the scattering in the channel is inevitable in most cases because of the singularity inherent in the BTE. Since the transport mechanism imposed in the ballistic and the quasi-ballistic is rather different, the ballistic picture of electron transport is somewhat misleading. Therefore, purely ballistic transport at room temperature may not be attained in most nanoscale MOS devices.