DocumentCode
1731423
Title
Hot-carrier degradation on the analogue/RF performances of a 90nm RF-CMOS technology demonstrated in a 900MHz low-power LNA
Author
Ramos, J. ; Jeamsaksiri, W. ; Mercha, A. ; Thijs, S. ; Linten, D. ; Wambacq, P. ; De Jaeger, B. ; Debusschere, I. ; Biesemans, S. ; Decoutere, S.
Author_Institution
Inter-Univ. Micro-Electron. Center, Leuven, Belgium
fYear
2005
Firstpage
64
Lastpage
65
Abstract
Hot-carrier stress impact on the analogue/RF performances of a state-of-the-art 90nm RF-CMOS technology, demonstrated on RF-circuits operating up to 5Ghz, is shown for the first time in a 900MHz LNA biased in moderate inversion. The trade-off between low-power consumption and lifetime is discussed, addressing limitations and pointing to possible solutions.
Keywords
CMOS integrated circuits; UHF amplifiers; hot carriers; low-power electronics; radiofrequency integrated circuits; 90 nm; 900 mHz; RF-CMOS technology; RF-circuits; analogue/RF performance; hot-carrier degradation; hot-carrier stress; low noise amplifier; low-power consumption; CMOS technology; Circuit synthesis; Degradation; Hot carriers; Impedance matching; RF signals; Radio frequency; Standards publication; Stress; System-on-a-chip;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
ISSN
1930-8868
Print_ISBN
0-7803-9058-X
Type
conf
DOI
10.1109/VTSA.2005.1497082
Filename
1497082
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