• DocumentCode
    1735603
  • Title

    The sensitivity and correlation study on Jramp test and high-field constant-voltage stress test for WLR

  • Author

    Yuan Chen ; Li, Fetig ; Mason, Philip W. ; Ma, Yi ; Oates, Anthony S.

  • Author_Institution
    Bell Labs., Lucent Technol., Orlando, FL, USA
  • fYear
    1999
  • fDate
    6/21/1905 12:00:00 AM
  • Firstpage
    108
  • Lastpage
    110
  • Abstract
    Jramp test and high-field constant voltage stress test are evaluated for both quick reliability assessment and in-line production monitoring. Although the conducting mechanism for both tests are at the Fowler-Nordheim tunneling regime, high-field constant voltage stress test is found to be a more sensitive test than Jramp for in-line production monitor. This can be explained by the nature of Jramp itself based on analysis using accumulative law. By using the dual V-t model to extract reliability information, this paper shows that Jramp can be also used to compare the absolute oxide reliability for different technologies
  • Keywords
    integrated circuit reliability; integrated circuit testing; process monitoring; tunnelling; Fowler-Nordheim tunneling regime; Jramp test; WLR; absolute oxide reliability; accumulative law; conducting mechanism; correlation study; dual V-t model; high-field constant-voltage stress test; in-line production monitoring; quick reliability assessment; sensitivity; wafer level reliability; Life testing; Read only memory; Sensitivity analysis; Stress; Tail; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 1999. IEEE International
  • Conference_Location
    Lake Tahoe, CA
  • Print_ISBN
    0-7803-5649-7
  • Type

    conf

  • DOI
    10.1109/IRWS.1999.830568
  • Filename
    830568