A Wide-band Front-end for Terrestrial and Cable Receptions

Author

Ming Gu ; Ma, Desheng ; Mao, Wei ; Yan, Jun ; Shi, Yin ; Dai, Fa Foster

Author_Institution

Inst. of Semicond., Chinese Acad. of Sci., Beijing

fYear

2007

Firstpage

209

Lastpage

212

Abstract

In this paper, a wide-band low noise amplifier, two mixers and a VCO with its buffers implemented in 50GHz 0.35mum SiGe BiCMOS technology for dual-conversion digital TV tuner front-end is presented. The LNA and up-converting mixer utilizes current injection technology to achieve high linearity. Without using inductors, the LNA achieves 0.1-1GHz wide bandwidth and 18.8-dB gain with less than 1.4-dB gain variation. The noise figure of the LNA is less than 5dB and its 1dB compression point is -2 dBm. The IIP3 of two mixers is 25-dBm. The measurement results show that the VCO has -127.27-dBc/Hz phase noise at 1-MHz offset and a linear gain of 32.4-MHz/V between 990-MHz and 1.14-GHz. The whole chip consumes 253mW power with 5-V supply

Keywords

BiCMOS integrated circuits; Ge-Si alloys; digital television; low noise amplifiers; mixers (circuits); television reception; voltage-controlled oscillators; 0.1 to 1 GHz; 0.35 micron; 18.8 dB; 253 mW; 5 V; 50 GHz; BiCMOS technology; SiGe; VCO; cable receptions; dual-conversion digital TV tuner front-end; mixers; terrestrial receptions; wide-band front-end; wide-band low noise amplifier; BiCMOS integrated circuits; Broadband amplifiers; Cable TV; Digital TV; Germanium silicon alloys; Low-noise amplifiers; Silicon germanium; Tuners; Voltage-controlled oscillators; Wideband; BiCMOS; SiGe; VCO; linearity; low noise amplifier; mixer; noise figure; wide band;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on

Conference_Location

Long Beach, CA

Print_ISBN

0-7803-9765-7

Electronic_ISBN

0-7803-9765-7

Type

conf

DOI

10.1109/SMIC.2007.322822

Filename

4117363