Silicon Millimeter-Wave Radio Circuits at 60-100 GHz

Author

Floyd, B. ; Pfeiffer, U. ; Reynolds, S. ; Valdes-Garcia, A. ; Haymes, C. ; Katayama, Y. ; Nakano, D. ; Beukema, T. ; Gaudier, B. ; Soyuer, M.

Author_Institution

IBM T. J. Watson Res. Center, Yorktown Heights, NY

fYear

2007

Firstpage

213

Lastpage

218

Abstract

This paper reviews silicon millimeter-wave radio circuits operating between 60 and 100GHz. Transmitter and receiver chips operating in the 60-GHz ISM band are highlighted, where the packaged chipset has shown data rates as high as 2 Gb/s over 5m for a wireless high-definition video link. In addition, a 60GHz PA with 23dBm output power and a class-E 60GHz PA with >20% peak PAE are reviewed. Finally, 77 and 94GHz downconverters are presented as a basis for an outlook to the performance achievable at these higher frequency bands

Keywords

bipolar MIMIC; high definition video; millimetre wave receivers; power amplifiers; transmitters; 60 to 100 GHz; ISM band; class-E power amplifier; down converters; millimeter wave bipolar integrated circuits; receiver chips; silicon millimeter-wave radio circuits; transmitter chips; wireless high-definition video link; Frequency; Germanium silicon alloys; Millimeter wave circuits; Millimeter wave communication; Millimeter wave technology; Packaging; Radio transmitters; Silicon germanium; Transceivers; Wireless communication; 60 GHz; SiGe; V band; millimeter wave bipolar integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on

Conference_Location

Long Beach, CA

Print_ISBN

0-7803-9765-7

Electronic_ISBN

0-7803-9765-7

Type

conf

DOI

10.1109/SMIC.2007.322823

Filename

4117364