DocumentCode
1735825
Title
Thermal stability improvement of Ni germanide utilizing Ni-Pd alloy for nano-scale Ge MOSFETs
Author
Ying-ying Zhang ; Zhun Zhong ; Shi-guang Li ; Soon-Yen Jung ; Kee-Young Park ; Ga-won Lee ; Jung-Woo Oh ; Majhi, P. ; Hsing-Huang Tseng ; Hi-Deok Lee
Author_Institution
Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon
fYear
2008
Firstpage
158
Lastpage
161
Abstract
The thermal stability of Ni germanide utilizing pure Ni and Ni-Pd alloy on Ge-on-Si substrate was studied. The proposed Ni-Pd alloy shows the highly thermal immune Ni germanide due to reduced oxidation and retarded Ni and Ge diffusion. Therefore, the Ni-Pd alloy could be promising for the high mobility Ge MOSFET applications.
Keywords
Ge-Si alloys; MOSFET; nanotechnology; nickel alloys; thermal stability; Ge-Si; Ni germanide; Ni-Pd; nano-scale Ge MOSFET; thermal immune; thermal stability; Atomic layer deposition; Atomic measurements; Germanium alloys; MOSFETs; Nickel alloys; Substrates; Temperature; Thermal engineering; Thermal stability; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2008. IWJT '08. Extended Abstracts - 2008 8th International workshop on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-1737-7
Electronic_ISBN
978-1-4244-1738-4
Type
conf
DOI
10.1109/IWJT.2008.4540039
Filename
4540039
Link To Document