A Dynamic GHz-Band Switching Technique for RF CMOS VCO

Author

Shibata, Kenichi ; Sato, Hisayasu ; Ishihara, Noboru

Author_Institution

Graduate Sch. of Eng., Gunma Univ., Kiryu

fYear

2007

Firstpage

273

Lastpage

276

Abstract

A CMOS VCO circuit technique which enables a dynamic GHz-band switching has been described. To get wide band switching, it has been clarified analytically that keeping Q constant is important to configure the circuit. To meet this, an LC VCO circuit which can switch resonant capacitors and inductors simultaneously for switching the band has been suggested. To verify the effect, a dual band VCO circuit has been designed and fabricated by using a 0.13-mum standard CMOS process technology and succeeded in switching the band dynamically from 2 to 4 GHz with keeping 1 MHz offset phase noise of -120 dBc/Hz

Keywords

CMOS integrated circuits; radiofrequency integrated circuits; switching circuits; voltage-controlled oscillators; 0.13 micron; 2 to 4 GHz; GHz band switching; LC VCO circuit; MOSFET switch; RF CMOS VCO; dual band VCO circuit; inductors; multi-band; multi-mode; resonant capacitors; wide band switching; CMOS technology; Inductors; RLC circuits; Radio frequency; Resonance; Switched capacitor circuits; Switches; Switching circuits; Voltage-controlled oscillators; Wideband; CMOS; GHz-band switching; LC-VCO; MOSFET switch; multi-band; multi-mode;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on

Conference_Location

Long Beach, CA

Print_ISBN

0-7803-9765-7

Electronic_ISBN

0-7803-9765-7

Type

conf

DOI

10.1109/SMIC.2007.322811

Filename

4117378