An experimental and numerical investigation of IGBT blocking characteristics

Author

Huang, S. ; Sheng, K. ; Amaratunga, G.A.J. ; Udrea, F. ; Waind, P.

Author_Institution

Dept. of Eng., Cambridge Univ., UK

Volume

1

fYear

2000

fDate

2000

Firstpage

407

Abstract

The breakdown characteristics of 600 V DMOS IGBT are investigated in detail using both experimental results and numerical simulations with self-heating effects included. The blocking characteristics of 1.8 kV trench IGBT are also studied. It is shown that thermally assisted impact ionization causes the IGBT device to breakdown. A negative resistance region of breakdown curve is observed, and the increased bipolar current gain results in more significant negative resistance part for the PT device. With negative charge introduced into the gate oxide, the breakdown characteristics of the trench IGBT can be improved

Keywords

electric breakdown; impact ionisation; insulated gate bipolar transistors; isolation technology; negative resistance; 1.8 kV; 600 V; DMOS IGBT; IGBT blocking characteristics; IGBT device breakdown; bipolar current gain; blocking characteristics; breakdown characteristics; breakdown curve; gate oxide; negative resistance part; negative resistance region; self-heating effects; thermally assisted impact ionization; trench IGBT; Anodes; Doping; Electric breakdown; Equations; Heat sinks; Impact ionization; Insulated gate bipolar transistors; Neodymium; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Motion Control Conference, 2000. Proceedings. IPEMC 2000. The Third International

Conference_Location

Beijing

Print_ISBN

7-80003-464-X

Type

conf

DOI

10.1109/IPEMC.2000.885438

Filename

885438