DocumentCode
1739216
Title
Excess noise modelling of SiGe BiCMOS devices
Author
Ibarra, J. ; Vescovi, D. ; Bary, L. ; Borgarino, M. ; Kovacic, S. ; Lafontaine, H. ; Graffeuil, J. ; Plana, R.
Author_Institution
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
Volume
1
fYear
2000
fDate
2000
Firstpage
319
Abstract
This paper presents an exhaustive characterization of the low frequency noise behavior of SiGe HBT which is used to locate the 1/f noise sources within the device. We demonstrate that 1/f noise sources are present at the emitter base junction, at the collector terminal and at the base and emitter resistance
Keywords
1/f noise; Ge-Si alloys; bipolar transistors; semiconductor device models; semiconductor device noise; semiconductor materials; 1/f noise; HBT; SiGe; SiGe BiCMOS device; excess noise model; low-frequency noise; BiCMOS integrated circuits; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit modeling; Low-frequency noise; Network topology; Noise figure; Noise generators; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location
Sinaia
Print_ISBN
0-7803-5885-6
Type
conf
DOI
10.1109/SMICND.2000.890245
Filename
890245
Link To Document