Multi-energy arsenic-ion-implanted GaAs photoconductors for ultrafast switching and THz generation

Author

Pan, Ci-Ling ; Liu, Tze-An ; Lin, Gong-Ru ; Tani, Masahiko

Author_Institution

Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

1

fYear

2000

fDate

2000

Firstpage

179

Abstract

We report on preliminary results on ultrafast responses and ultra-wide bandwidth of furnace-annealed multi-energy-bombarded GaAs:As ⁺ photoconductors at high bias voltage with much curtailed tail response. Further, we report THz emission characteristics of dipole antennas fabricated on GaAs:As⁺ in light of previous works on low temperature grown GaAs

Keywords

III-V semiconductors; gallium arsenide; ion implantation; microwave photonics; optical pulse generation; optical switches; photoconducting materials; submillimetre wave generation; GaAs photoconductors; GaAs:As; GaAs:As⁺; GaAs:As⁺ photoconductors; THz emission characteristics; THz generation; arsenic-ion-implanted; curtailed tail response; dipole antennas; furnace-annealed; high bias voltage; low temperature grown GaAs; multi-energy-bombarded; ultra-wide bandwidth; ultrafast responses; ultrafast switching; Charge carrier lifetime; Dark current; Dipole antennas; Gallium arsenide; Molecular beam epitaxial growth; Personal communication networks; Photoconductivity; Tail; Ultrafast optics; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE

Conference_Location

Rio Grande

ISSN

1092-8081

Print_ISBN

0-7803-5947-X

Type

conf

DOI

10.1109/LEOS.2000.890734

Filename

890734