A room temperature unipolar quantum dot intersubband long wavelength (13.3 μm) laser

Author

Krishna, S. ; Bhattacharya, P. ; Singh, J. ; Urayama, J. ; Norris, T.B. ; McCann, P.J. ; Namjou, K.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

1

fYear

2000

fDate

2000

Firstpage

310

Abstract

Summary form only given. We report the room temperature operation of a novel unipolar self-organized quantum dot FIR laser (13.3 μm) based on transitions between discrete bound electron states in self-organized dots. A typical photoluminescence spectrum of InGaAs-GaAs self-organized quantum dots is shown

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared spectra; laser transitions; photoluminescence; quantum well lasers; semiconductor quantum dots; submillimetre wave lasers; submillimetre wave spectra; 13.3 mum; InGaAs-GaAs; InGaAs-GaAs self-organized quantum dots; discrete bound electron states; laser transitions; photoluminescence spectrum; room temperature unipolar quantum dot intersubband long wavelength laser; self-organized dots; unipolar self-organized quantum dot FIR laser; Electrons; Finite impulse response filter; Infrared detectors; Infrared spectra; Land surface temperature; Laser radar; Quantum dot lasers; Spectroscopy; Stationary state; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE

Conference_Location

Rio Grande

ISSN

1092-8081

Print_ISBN

0-7803-5947-X

Type

conf

DOI

10.1109/LEOS.2000.890802

Filename

890802