DocumentCode
1739881
Title
A case study of failure analysis and guardband determination for a 64M-bit DRAM
Author
Kao, Chin-Te ; Wu, Sam ; Chen, Jwu E.
fYear
2000
fDate
2000
Firstpage
447
Lastpage
451
Abstract
Chips with defects, which escape the test, will cause a quality problem and will hurt goodwill and decline revenue. It is important to look for the defect root causes and to derive the prevention strategy. In this paper a case study of a 64M-DRAM is used to demonstrate the approaches of failure analysis in silicon debug stage and, consequently the determination of the tests for production. The consideration of test derivation is both to enhance the yield and to improve the product quality with low test cost. The root cause, electrical modeling of defects, test selection and guardband determination are introduced. Finally, a quantitative measure is given to show the value of failure analysis for a high volume DRAM product
Keywords
DRAM chips; failure analysis; integrated circuit economics; integrated circuit testing; integrated circuit yield; 64 Mbit; DRAM; failure analysis; guardband determination; prevention strategy; product quality; test cost; test derivation; test selection; yield; Computer aided software engineering; Costs; Failure analysis; Production; Random access memory; Semiconductor device measurement; Silicon; Temperature; Testing; Volume measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Symposium, 2000. (ATS 2000). Proceedings of the Ninth Asian
Conference_Location
Taipei
ISSN
1081-7735
Print_ISBN
0-7695-0887-1
Type
conf
DOI
10.1109/ATS.2000.893665
Filename
893665
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