• DocumentCode
    1739944
  • Title

    Epitaxy-ready reflecting substrates for resonant-cavity-enhanced silicon photodetectors

  • Author

    Emsley, Mathew K. ; Ünlü, M. Sehim

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Boston Univ., MA, USA
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    432
  • Abstract
    We have presented a commercially reproducible single crystalline silicon wafer with a buried distributed Bragg reflector. These wafers can be used for fabricating silicon resonant cavity enhanced (RCE) photodiodes with high bandwidth efficiencies as well as low dark current
  • Keywords
    SIMOX; dark conductivity; molecular beam epitaxial growth; optical fabrication; photodiodes; silicon; substrates; Si resonant cavity enhanced photodiode fabrication; Si-SiO2; buried distributed Bragg reflector; epitaxy-ready reflecting substrates; high bandwidth efficiencies; low dark current; resonant-cavity-enhanced silicon photodetectors; single crystalline silicon wafer; Crystallization; Ice; Optical refraction; Optical variables control; Photodetectors; Photodiodes; Reflectivity; Resonance; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
  • Conference_Location
    Rio Grande
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-5947-X
  • Type

    conf

  • DOI
    10.1109/LEOS.2000.893899
  • Filename
    893899
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1739944