DocumentCode
1741875
Title
Condensation effects of indirect excitons in type II structures
Author
Butov, L.V.
Author_Institution
Inst. of Solid State Phys., Acad. of Sci., Chernogolovka, Russia
fYear
2000
fDate
12-12 May 2000
Firstpage
116
Abstract
Summary form only given. A system of indirect (interwell) excitons in coupled quantum wells (CQWs) provides a unique opportunity for experimental study of two-dimensional light composite bosons thermalized down to ultralow temperatures. The long recombination lifetime of indirect excitons promotes the exciton accumulation in the low energy exciton states and allows the system to cool down to temperatures where the exciton gas becomes degenerate at densities well below the Mott density. We present an experimental probe of the theoretically predicted specific bosonic properties of excitons such as stimulated exciton scattering due to high occupancy of exciton state and exciton Bose-Einstein condensation in GaAs/AlGaAs and AlAs/GaAs CQWs at ultralow temperatures T/sub bath/>50 mK.
Keywords
Bose-Einstein condensation; III-V semiconductors; aluminium compounds; excitons; gallium arsenide; photoluminescence; semiconductor quantum wells; stimulated scattering; superradiance; AlAs-GaAs; GaAs-AlGaAs; condensation effects; coupled quantum wells; degenerate exciton gas; exciton Bose-Einstein condensation; exciton accumulation; high occupancy; indirect excitons; interwell excitons; long recombination lifetime; low energy exciton states; photoluminescence; stimulated exciton scattering; superradiance; two-dimensional light composite bosons; type II structures; ultralow temperatures; Excitons; Hoses; Joining processes; Phase shifting interferometry; Photonic integrated circuits; Physics; Probes; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest
Conference_Location
San Francisco, CA, USA
ISSN
1094-5695
Print_ISBN
1-55752-608-7
Type
conf
Filename
901730
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