DocumentCode
1741891
Title
Second-harmonic generation from GaAs/AlAs multilayers in reflection geometry
Author
Gu, X. ; Ding, Y.J. ; Rabinovich, W.S. ; Katzer, D.S.
Author_Institution
Avanex Corp., Fremont, CA, USA
fYear
2000
fDate
12-12 May 2000
Firstpage
126
Lastpage
127
Abstract
Summary form only given. GaAs and AlGaAs have very large second-order susceptibilities. To achieve efficient frequency conversion, multilayers have been used to achieve quasi-phase matching (QPM). Although reflected-second-harmonic generation (SHG) in GaAs/Al/sub x/Ga/sub 1-x/As multilayers was initially studied, QPM in this geometry has not been achieved so far. Here, we report our results on detailed investigation of reflection-SHG from high-quality GaAs-AlAs multilayers. For the first time, to our knowledge, we have identified second- and third-order QPM peaks by measuring the spectrum of the reflection SHG. We have measured the dependence of the SH pulse energy on the pump polarization as well as incident angle.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; nonlinear optical susceptibility; optical harmonic generation; optical multilayers; optical phase matching; optical pumping; reflectivity; GaAs-AlAs; GaAs/AlAs multilayers; SH pulse energy; efficient frequency conversion; high-quality GaAs-AlAs multilayers; incident angle; large second-order susceptibilities; pump polarization; quasi-phase matching; reflected-second-harmonic generation; reflection SHG; reflection geometry; second-harmonic generation; second-order QPM peaks; third-order QPM peaks; Gallium arsenide; Geometry; Nonhomogeneous media; Polarization; Reflection;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest
Conference_Location
San Francisco, CA, USA
ISSN
1094-5695
Print_ISBN
1-55752-608-7
Type
conf
Filename
901747
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